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| an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System PHI 920-33 v2.01 Absolute'fiaximum Parameter Collector-EmitterVoltage Collector-Emitter Emitter-Base Voltage Ratings at 25C 1 Symbol V CEO V ES V ES0 L PO T s-r0 TJ eJC 1 Rating 25 65 3.0 4.7 91 -55 to +150 200 1.6 Units V V ,181 (4.60)+.010 (0.25) 225 (5.72)a.015 (0.38) BASE 220 I-(5.59) , II Voltage V A w "C "C "CIW .4~~r?:-ll(o.03~ CollectorCurrent Power Dissipation StorageTemperature JunctionTemperature Thermal Resistance I .087 (2.21)*.010 (0.25) I I 1 II t UNLESS OTHERWISE NOTED, TOLERANCES ARE INCHES r.OOS (MILLIMETERS dI.13MM) Electrical Characteristics Parameter Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance at 25C Symbol GP 7\c RL VSWR-T Min 7.0 40 10 Max 2:l Units dB % dB V&f5 V,,=25 V,,=25 V,,=25 V, I,,=200 V, I,,=200 V, l,g200 V. I,,=200 TestConditions mA, PO,,=33 W, F=l930,1990 mA, PO,,=33 W, F=1930,1990 mA, PO,=33 W, F=l930,1990 mA, PO,=33 W, F=lQ30,1990 MHz MHz MHz MHz Broadband Test Fixture Impedances F(GHz) .1930 1960 1990 z&-4 2.6 - j2.6 2.5 - j2.5 2.4 - j2.3 z,,(n) 3.3 - jl .l 3.8 - jl .O 4.1 - jO.8 Wireless Bipolar Power Transistor, 33W PH1920-33 v2.01 RF Test Fixture DIODE lN4245 POLARITY BAND PC BOARDS ROGERS 6010.5 ,025" 2 PLACES . ELECTROLYTIC CAPACITOR, 50 UF 50 V MALLORY TTSBMSBA SUP CONNECTOR. WA-COM 2052-5636-02 2 PLACES CARRIER BRASS 73050257-12 -I L TRANSISTOR CARRIER, COPPER 73050256-01 CLAMP, NORrL 73050258-S I Test Fixture PC Board Dimensions : w I= 1.265" 1.030" ,962" .762" d |
Price & Availability of PHI920-33
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